IC-CAP PSP Model Extraction Package

The PSP Model Extraction Package

The extraction package, for use with Agilent's Integrated Circuit Characterization and Analysis Program (IC-CAP) software, provides an easy-to-use interface for measurement collection, recommended extraction flow, and model implementation. This structure will allow you to easily produce models that will accurately and efficiently represent your device process.

The package was developed within the open and flexible IC-CAP software environment through our partnership with AdMOS. Agilent also partnered with AdMOS on the development of the highly efficient and flexible IC-CAP BSIM4 Model Extraction Package (85194KL).

The PSP Model Extraction Package is part of Agilent's broad strategy to support the latest standardized CMOS models.

Using the PSP Model Extraction Package is a very intuitive process. The step-by-step extraction flow takes you through a logical and efficient approach to extracting accurate CMOS models. The package incorporates IC-CAP's graphical analysis interface, MultiPlot Studio, and customizable extraction steps so the modeling engineer becomes an integral part of the modeling process.

The package is segmented into two categories; measurement and extraction. Measurements can be easily imported from other tools to this package for model extraction.

PSP Toolkit Features

Like the IC-CAP BSIM toolkits, the PSP toolkit provides a unified measurement environment. This capability allows you to take device measurements once and use the same data for the PSP, BSIM4 and BSIM models, as long as the required data is a subset of the overall measurement data set.

The separate measurement and extraction modules each provide a set of procedures for measuring and extracting DC and RF model parameters. Each model provides step-by-step guidelines which can be altered to customize the extraction to a particular process. The extraction prackages also provide the option to fully automate the entire extraction process.

Elements of the PSP Model Extraction Package are described in the following slides:

• PSP Model Extraction Package - complete sequence, 8 slides
• Extraction Strategy
• User Interface
• Basic Capacitance
• Local Model Extraction - 1
• Local Model Extraction - 2
• Scalable Parameters
• Finetune Global Model
• STI Parameter Extraction
• PSP Model Extraction Package - PDF version (2.0 MB)

The PSP Model

As device geometries approach 65nm and smaller, the BSIM4 model no longer holds for growing analog and RF applications. A more advanced modeling solution was necessary.

It has become commonly understood by the compact modeling community that the traditional Threshold-voltage-based modes, like the BSIM3 and BSIM4, have reached the limits and should be replaced by more accurate physics based model

Surface-potential-based approaches provide physics-based modeling of all regions of operation and do not make additional approximations for model convergence.

The PSP model is an advanced surface-potential-based model (based on charge-sheet models) developed jointly by Pennsylvania State University (efforts now moved to Arizona State University) and Philips Research Laboratories (now NXP Semiconductors).

The major features of the PSP include the following:

• Local parameters for each device geometry that can be up scaled to obtain global parameters
• Physical surface-potential-based formulation in both intrinsic and extrinsic model modules
• Physical and accurate description of the accumulation region
• Inclusion of all relevant small geometry effects
• Modeling of the halo implant effects, including the output conductance degradation in long devices
• Coulomb scattering and non-universality in the mobility model
• Non-singular velocity-field relation enabling the modeling of RF distortions including intermodulation effects (IM3)
• Complete Gummel symmetry
• Mid-point bias linearization enabling accurate modeling of the ratio-based circuits (e.g. R2R circuits)
• Quantum-mechanical corrections
• Correction for the polysilicon depletion effects
• GIDL/GISL model
• Surface-potential-based noise model including channel thermal noise, flicker noise and channel-induced gate noise.
• Advanced junction model including trap-assisted tunneling, band-to-band tunneling and avalanche breakdown
• Spline-collocation-based NQS model including all terminal currents
• Stress model
• Adaptive gate voltage measurements based on threshold voltage

The PSP Model was selected (December 2005) by the CMC as the next generation of standardized CMOS model to replace the BSIM4 model.

Pricing and Availability

The PSP Model Extraction Package (85194PL) is orderable now at prices starting at $22,000. IC-CAP parameter extraction software is available now. Contact your local Agilent EEsof EDA sales engineer for pricing.

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