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Complete modeling solution to extract the HiSIM_HV model
The Agilent EEsof HiSIM_HV Model Extraction Package (85194QL) is a complete, commercial solution to extract the all parameters of the HiSIM_HV model, an advanced, industry standard high voltage CMOS model. » details
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The HiSIM_HV Model Extraction Package
The model extraction package, for use with Agilent's Integrated Circuit Characterization and Analysis Program (IC-CAP) software, provides an easy-to-use, efficient and customizable method for measuring and extracting accurate parameter values for the HiSIM_HV model. The HiSIM-HV device model, developed by Hiroshima University in Japan, was designed for both symmetrical HVMOS and asymmetrical LDMOS devices. Laterally Diffused MOS (LDMOS) devices are used in RF power applications. The HiSIM_HV model is based on the HiSIM2.4 compact device model for bulk CMOS devices. The HiSIM_HV model includes other typical high voltage effects such as modeling of the drift region resistance, quasi-saturation effects and self-heating. For more information about the HiSIM2.4 model, please see the HiSIM2.4 Model Extraction Package page.
- Complete, intuitive, automated procedure for measuring and extracting parameters
- Option of adapting the extraction, using the power of IC-CAP’s open and flexible software environment
- Windows-style user interface and plotting tools
- Provided with Spice3 simulation model and simulation links to HSPICE and Spectre
- Access to IC-CAP’s optimization engines and Plot Optimizer.
Agilent distributes a series of CMOS extraction packages for IC-CAP sharing a similar user interface. In addition to the HiSIM_HV, extraction packages are available for the HiSIM2, PSP, BSIM4, BSIM3, and Agilent HBT models.
The HiSIM_HV Model Extraction Package (85194QL) is available now at prices starting at approximately $22,000. A bundle containing the HiSIM_HV and HiSIM2 Model Extraction Packages is also available. Please contact your local Agilent EEsof EDA sales engineer for pricing.
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