IC-CAP BSIM4 Model Extraction Package

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DC and RF Measurement and Extraction Modules

As CMOS technologies have evolved, new versions of the BSIM models have been standardized by the Compact Modeling Council. Depending on the changes to the model, traditional measurement/ extraction approaches require new measurements on your devices.

The measurement philosophy of the IC-CAP BSIM toolkits provides a unified measurement environment so that consistent measurements are maintained for easy migration of data from one model to another: i.e. BSIM3 to BSIM4

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Details of the unified measurement environment

The separate measurement and extraction modules each provide a set of procedures for measuring and extracting DC and RF model paramteters. Each module provides step-by-step guidelines which can be altered to customize the extraction to a particular process. The extraction packages also provide the option to fully automate the entire extraction process.

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DC measurement module environment

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RF measurement module environment

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Main DC extraction window

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Results visualization of final results integrated with MutliPlot Studio Window

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Predefined Tuners and Optimizers integrated with MultiPlot Studio window

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RF extraction has a similar look and feel to the DC extraction

The BSIM4 Model Extraction package offers the following benefits:

• High precision DC, CV, and RF measurement routines with effective de-embedding methods.
• Accurate extraction and optimization capabilities for all DC, CV, and RF models that are fully scalable.
• Easy to configure blinned models with no discontinuity problem.
• Flexible and open extraction package that allows you to follow the predefined extraction flow or create custom modification to better fit your particular modeling process.

Features at a Glance

• Complete package for highly accurate DC, CV, RF and Temperature extraction routines for the industry standard BSIM4 model with STI mechanical stress effect. Menu driven measurement setups allow you to quickly capture the necessary data to start your modeling.
• Easy-to-use user interface takes you step by step throughout the complete device measurements and parameter extraction a optimization. Once you have a good understanding of your extraction flow, the process can be set for automatic extraction.
• Predefinded plot optimizers and tuners allow you to efficiently interact with your model extraction flow.
• Automatic HTML report generator that produces a complete documentation of your final results.
• A mobility model which accounts for Coulombic scattering and the channel length dependence of mobility due to heavy halo-doping.
• A scalable substrate resistance model (rbodyMod = 2) that is scalable with channel length, channel width and number of fingers.
• Gate resistance parameters XGW, NGCON that can now be specified as instance parameters.
• Improved temperature dependence of model parameters VOFF, VFBSDOFF.
• Enhanced tempMod = 2, where Vth(DITS) and gate tunneling models are functions of nominal temperature and the temperature dependence of flat-band voltage is added.
• A new instance parameter DELVTO representing threshold voltage variation.
• An enhanced well-proximity effect model enabling some device parameters (Vth, U0, K2) to vary with distance from the edge of well-implantation mask due to ion-scattering.
• The full BSIM4 Vth model is implemented into the Igc equation which enables.
• Scalable stress effect model for process induced stress effect.
• Unified current-saturation model that includes all mechanisms of current saturation - velocity saturation, velocity overshoot and source end velocity limit.
• Temperature model format that allows convenient prediction of temperature effects on saturation velocity, mobility, and S/D resistances.
• Non-Quasi-Static (NQS) model.
• Gate direct tunneling current model for multiple-layer gate dielectrics.
• Gate induced drain leakage (GIDL) current model.
• Induced gate noise model.
• Quantum mechanical charge-layer-thickness model.
• Enhanced accuracy and flexibility of holistic thermal noise model.
• Improved accuracy of forward body bias model.
• Model of the intrinsic input resistance for both RF, high-frequency analog and high-speed digital applications.
• Layout dependent parasitic model for multi-finger devices.
• And a flexible substrate resistance network for RF modeling.

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