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IC-CAP Characterization & Modeling Handbook

Agilent EEsof EDA

In this IC-CAP modeling reference book, the readers will find a wide range of topics, starting with the basics of device modeling to the more advanced measurement, calibration, simulation device modeling techniques and statistical modeling.

The book represents a compilation of applications that have been developed by Dr. Franz Sischka, Agilent Technologies, using IC-CAP during the past years.

It is an evolution of the IC-CAP modeling handbook and several IC-CAP modeling toolkits developed by the author. The book has been a very useful reference for many device-modeling engineers.

Table of Contents

Chapter 1. Introduction
Chapter 2. Device Modeling Tutorials
Chapter 3. Measurement Techniques for Device Modeling
Chapter 4. Curve-Fitting Techniques
Chapter 5. Device Simulation
Chapter 6. Device Modeling
Chapter 7. Statistical Modeling
Application Notes and Papers

Chapter 1. Introduction

1.1	Foreword	View PDF
1.2	About this handbook	View PDF

Chapter 2. Device Modeling Tutorials
This chapter covers the fundamentals of device modeling and important modeling terminology. Several rudimentary device-modeling questions will be addressed in this chapter.
2.1	Modeling tutorials	View PDF
2.2	Process Control Monitoring (PCM) Measurements versus modeling parameters	View PDF
2.3	Foundry process modeling and RF-IC design flow See also Application Notes and Papers.	View PDF

Chapter 3. Measurement Techniques for Device Modeling
This chapter provides a comprehensive coverage of device measurement techniques such as DC, CV, Noise, FFT, linear S-Parameters and large signal measurements and calibrations.
3.1	DC measurements and calibration techniques Tips for Extending Agilent 4155/6 and 4142 Measurement Range See also Application Notes and Papers.	View PDF
3.2	CV measurement and calibration techniques Application Notes and Papers: Analysis of Semiconductor Capacitance Characteristics	View PDF
3.3	Network Analyzer Measurement and Standard Calibration Techniques
3.3.1	Linear Vector Network Analyzer (VNA) measurements See also: VNA cabling diagram.	View PDF
3.3.1.1	Displaying phase shift	View PDF
3.3.2.1	VNA standard calibration techniques and verification	View PDF
3.3.2.2	VNA calibration with gating in the time domain	View PDF
3.3.3	S-Parameters	View PDF
3.3.3.1	Basics of S-parameters, part 1	View PDF
3.3.3.1	Basics of S-parameters, part 2	View PDF
3.3.3.2	Interpreting S-parameter plots	View PDF
3.3.3.3	Testing S-parameters for typical passive circuits See also: application notes and papers.	View PDF
3.3.4	De-embedding	View PDF
3.3.4.1	Ft modeling of a transistor affected by parasitic	View PDF
3.3.4.2	Twoport matrices for device modeling	View PDF
3.3.4.3	De-embedding techniques with Z, Y, S, A Matrices	View PDF
3.3.4.4	Verifying the de-embedding procedure	View PDF
3.3.4.5	Modeling the skin effect	View PDF
3.4	High frequency large-signal measurement
3.4.1	Accurate and traceable high frequency large signal measurements of twoports	View PDF
3.4.2	Nonlinear network analyzer measurements See also: application notes and papers.	View PDF
3.5	Pulsed measurements
3.5.1	Pulsed DC measurements	View PDF
3.5.2	Pulse biased S-parameter measurements	View PDF
3.6	Spectrum analysis	View PDF
3.7	Time Domain Reflectometer (TDR)
3.7.1	TDR measurement and calibration techniques	View PDF
3.7.2.1	Basics of TDR measurements	View PDF
3.7.2.2	TDR plots tutorials	View PDF
3.8	FFT
3.8.1	FFT This chapter explains how to implement an FFT in IC-CAP to transform S11 curves into TDR plots and vice versa.	View PDF
3.9	Noise Measurements
3.9.1	Notes on 1/f noise measurements	View PDF

Chapter 4. Curve-Fitting Techniques		View PDF
This chapter discusses various techniques for curve fitting.
4.1	Regression analysis	View PDF
4.2	Applying regression analysis to modeling	View PDF
4.3	Direct, visual parameter extraction	View PDF
4.4	Creating synthetic measurement data for the verification of extraction methods	View PDF
4.5	General modeling techniques	View PDF

Chapter 5. Device Simulation
Device simulation is an important part of parameter extraction and optimization process. This chapter will discuss the different internal and external simulators that IC-CAP software uses to perform device simulations.
5.1	History of circuit simulators	View PDF
5.2	Simulator interface of IC-CAP	View PDF
5.3	Syntax for simulator netlists	View PDF
5.4	User-defined models	View PDF
5.5	Calculating S-parameters from complex voltages	View PDF
5.6	RF simulators	View PDF

Chapter 6. Device Modeling
This chapter takes you to the more advanced topics in device modeling for different types of devices and models. Modeling of active devices such as diodes, BJT, MESFET, HEMT, MOSFET, and passive components are discussed in depth. Also included are topics of 1/f noise modeling and thermal modeling.
6.1	Modeling a diode See also: History of a Schottky Diode and Diode Models.	View PDF
6.2	Transistor Modeling
6.2.1	Gummel-Poon bipolar model	View PDF
6.2.2	IC-CAP toolkit for VBIC	View PDF
6.2.2.1	Recapitulating the Gummel-Poon model	View PDF
6.2.2.2	The VBIC model	View PDF
6.2.2.3	Comparing the VBIC and Gummel-Poon parameters	View PDF
6.2.2.4	VBIC modeling strategy	View PDF
6.2.2.5	Measuring and extracting the VBIC parameters	View PDF
6.2.2.6	VBIC background information See also: Appendix: Regression Analysis and Acknowledgement, Web-Information, and Publications	View PDF
6.2.3	BSIM3v3 characterization See also: ADS implementation of the BSIM3V3 model	View PDF
6.2.4	Measurement and extraction of BSIM4 model parameters	View PDF
6.2.5	The Curtice MESFET model	View PDF
6.2.6	The modeling of transistors in the operating point	View PDF
6.2.7	The history of different transistor models • The Bipolar transistor invention - Walter Houser Brattain • The history of HEMT transistors • About William Bradford Shockley
6.3	Passive RF Modeling
6.3.1	A new approach to develop models for passive on-wafer components and small signal behavior of transistors	View PDF
6.3.2	Package modeling overview	View PDF
6.4	Noise Modeling
6.4.1	1/f noise modeling for semiconductors See also: 1/f noise measurement and modeling presentation.	View PDF
6.5	Thermal Modeling	View PDF

Chapter 7. Statistical Modeling

7.1	Measurement related and model parameter related statistics	View PDF
7.2	IC-CAP statistical analysis See also: IC-CAP statistics package overview presentation.	View PDF

Application Notes and Papers

Device modeling basics
	RF Measurements and Modeling, with Special Emphasis on Test Structures	View PDF
	Professional Software Tools for Device Modeling	View PDF
Measurement techniques for device modeling
	DC measurements and calibration techniques
	Preventing Oscillations in Device Characterization	View PDF
	Device Characterization with the HP 4062UX and IC-CAP	View PDF
	Agilent 4070 Series Accurate Capacitance Characterization at the Wafer Level	View PDF
	Efficient Microwave Bias and Test Using the HP 4142B Modular DC Source/Monitor	View PDF
	The Fundamentals of S-parameters
	S-parameters of Strip Lines	View PDF
	S-Parameter Basics for Modeling Engineers	View PDF
	High Frequency Large Signal Measurement
	Calibrated Vectorial Nonlinear-Network Analyzers	View PDF
	Calibrated Measurements of Nonlinearities in Narrowband Amplifiers Applied to Intermodulation and Cross Modulation Compensation	View PDF
	Using Orthogonal Polynomials as Alternatives for VIOMAP to Model Hardly Nonlinear Devices	View PDF
	Black Box Modeling of Hard Nonlinear Behavior in the Frequency Domain	View PDF
	Characterizing Components Under Large Signal Excitation: Defining Sensible "Large Signal S-Parameters"?!	View PDF
	Accurately Characterizing Hard Nonlinear Behavior of Microwave Components with the Nonlinear Network Measurement System: Introducing "Nonlinear Scattering Functions"	View PDF
	Measuring Transistor Dynamic Loadlines and Breakdown Currents Under Large-Signal High-Frequency Operating Conditions	View PDF
	Direct Extraction of the Non-linear HEMT Model from Vectorial Large-signal Measurements	View PDF
	The Three Musketeers of Large Signal RF and Microwave Design - Measurement, Modeling and CAE	View PDF
	System Level Simulation Benefits from Frequency Domain Behavioral Models of Mixers and Amplifiers	View PDF
	Recent Advances in the Measurement and Black-Box Modeling of High-Frequency Components	View PDF
	IM3 Suppression Using a Technology Independent Method Based on Vectorial Large-signal Measurements	View PDF
	Recent Advances in the Frequency Domain Measurement and Modeling of Non-linear Microwave Components	View PDF
	Easy and Accurate Empirical Transistor Model Parameter Estimation from Vectorial Large-signal Measurements	View PDF
	Measurement Based Behavioral Modeling of Components under Modulated Large-signal Operating Conditions	View PDF
	Network Analysis Beyond S-parameters: Characterizing and Modeling Component Behaviour under Modulated Large-Signal Operating Conditions	View PDF
	Large-Signal Measurements "Going beyond S-parameters..."	View PDF
	N4463A LCA large-signal component analyzer website information	View PDF

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